Method and apparatus for plasma dicing a semi-conductor wafer
US10818552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Feb 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.