Plugs for interconnect lines for advanced integrated circuit structure fabrication
US10818774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A conductive interconnect line is in a trench in the ILD layer, the conductive interconnect line having a first portion and a second portion, the first portion laterally adjacent to the second portion. A dielectric plug is between and laterally adjacent to the first and second portions of the conductive interconnect line, the dielectric plug comprising a metal oxide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.