Christopher P. Auth
69Patents
8h-index
44Co-inventors
78Inventor score
Filing activity: Mar 31, 2003 → Apr 11, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10121875B1 | Replacement gate structures for advanced integrated circuit structure fabrication | Electricity | 49 | Active |
| US7691752B2 | Methods of forming improved EPI fill on narrow isolation bounded source/drain regions and structures formed thereby | Electricity | 42 | Active |
| US6870179B2 | Increasing stress-enhanced drive current in a MOS transistor | Electricity | 32 | Expired |
| US10121882B1 | Gate line plug structures for advanced integrated circuit structure fabrication | Electricity | 27 | Active |
| US10677543B2 | Cooling tower | Emerging Cross-Sectional Technologies | 9 | Active |
| US10741669B2 | Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication | Electricity | 9 | Active |
| US10304940B1 | Gate cut and fin trim isolation for advanced integrated circuit structure fabrication | Electricity | 8 | Active |
| US10734379B2 | Fin end plug structures for advanced integrated circuit structure fabrication | Electricity | 8 | Active |
| US10541316B2 | Contact over active gate structures for advanced integrated circuit structure fabrication | Electricity | 6 | Active |
| US10460993B2 | Fin cut and fin trim isolation for advanced integrated circuit structure fabrication | Electricity | 6 | Active |
| US10756204B2 | Fin trim isolation with single gate spacing for advanced integrated circuit structure fabrication | Electricity | 6 | Active |
| US10615265B2 | Gate cut and fin trim isolation for advanced integrated circuit structure fabrication | Electricity | 6 | Active |
| US7861406B2 | Method of forming CMOS transistors with dual-metal silicide formed through the contact openings | Emerging Cross-Sectional Technologies | 5 | Active |
| US7338847B2 | Methods of manufacturing a stressed MOS transistor structure | Electricity | 5 | Expired |
| US10707133B2 | Trench plug hardmask for advanced integrated circuit structure fabrication | Electricity | 4 | Active |
| US10886383B2 | Replacement gate structures for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10777655B2 | Heterogeneous metal line compositions for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10796968B2 | Dual metal silicide structures for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10840151B2 | Dual metal silicide structures for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10727313B2 | Dual metal gate structures for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10796951B2 | Etch-stop layer topography for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10790378B2 | Replacement gate structures for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10777656B2 | Fin cut and fin trim isolation for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
| US10775117B2 | Water collection/deflection arrangements | Emerging Cross-Sectional Technologies | 3 | Active |
| US11031487B2 | Contact over active gate structures for advanced integrated circuit structure fabrication | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.