Method for limiting growth of KDP-type crystals with a long seed

US10822715B2 · kind B2 · utility

Assignee

• Shanghai Institute of Optics And Fine Mechanics, Chinese Academy of Sciences · CN

Inventors

• Hongji Qi · Hangzhou City, CN
• Duanyang Chen · Hangzhou City, CN
• Jianda Shao · Shanghai, CN
• Xiaoyi Xie · Shanghai, CN
• Bin Wang · Dongguan, CN
• Hu Wang · Tianjin, CN

Key dates

• Filing date: Dec 12, 2018
• Grant date: Nov 3, 2020
• Expiry date: Mar 28, 2039

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/64
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Method for limiting growth of KDP-type crystals with a long seed where an upper and a lower ends of the long seed crystal are respectively limited by an upper baffle plate and a lower tray to restrain growth of a pyramidal surface and allow only four prismatic surfaces in [100] and [010] directions to grow. Finally grown crystal contains no pyramid-prism interface that severely restricts quality of optical element, and all cut optical elements have high optical quality. As four prismatic surfaces are subjected to highly similar growing environment and grow simultaneously, all optical elements cut therefrom have high optical uniformity. Due to uniqueness of a cutting angle of a KDP crystal frequency-tripled element, high cutting efficiency is achieved in the element, and an area of a maximum frequency-tripled element that may be cut is known in advance according to a horizontal size of the grown crystal.