Method for producing aluminum nitride single crystal substrate
US10822718B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2017 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Mar 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an AlN single crystal substrate, the method including: i) preparing a first base substrate consisting of a first AlN single crystal; ii) growing a first AlN single crystal layer over a main face of the first base substrate, to obtain a layered body; iii) cutting the first MN single crystal layer of the layered body, to separate the layered body into a second base substrate and a first part of the first AlN single crystal layer, the second base substrate including the first base substrate and a thin film layered thereon, the thin film being a second part of the first AlN single crystal layer; iv) polishing a surface of the thin film, to obtain a third base substrate consisting of a second AlN single crystal; and v) growing a second AlN single crystal layer over the polished surface of the third base substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.