Patent · US Active

High sensitivity MEMS pressure sensor

US10823630B1 · kind B1 · utility

1Cited by
3References
15Claims
0Family size

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Key dates

Filing dateNov 13, 2017
Grant dateNov 3, 2020
Priority date
Expiry dateApr 6, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/0047
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

We present a microelectromechanical system (MEMS) graphene-based pressure sensor realized by transferring a large area, few-layered graphene on a suspended silicon nitride thin membrane perforated by a periodic array of micro-through-holes. Each through-hole is covered by a circular drum-like graphene layer, namely a graphene “microdrum”. The uniqueness of the sensor design is the fact that introducing the through-hole arrays into the supporting nitride membrane allows generating an increased strain in the graphene membrane over the through-hole array by local deformations of the holes under an applied differential pressure. Further reasons contributing to the increased strain in the devised sensitive membrane include larger deflection of the membrane than that of its imperforated counterpart membrane, and direct bulging of the graphene microdrum under an applied pressure. Electromechanical measurements show a gauge factor of 4.4 for the graphene membrane and a sensitivity of 2.8×10-5 mbar-1 for the pressure sensor specific example described, with a good linearity over a wide pressure range. The present sensor outperforms most existing MEMS-based small footprint pressure sensors us…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.