Semiconductor structures

US10825690B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Cheng Zhang · Ann Arbor, US
• Hai Yang Zhang · Shanghai, CN
• Yan Wang · Shanghai, CN

Key dates

• Filing date: Jan 9, 2019
• Grant date: Nov 3, 2020
• Expiry date: Jan 9, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure a base substrate and a sidewall spacer layer formed on the base substrate. The sidewall spacer layer includes a plurality of first sidewall spacer layers and a plurality of second sidewall spacer layers spaced apart from each other. At least one sidewall of a second sidewall spacer layer of the plurality of second sidewall spacer layers is formed on a first sidewall spacer layer of the plurality of first sidewall spacer layers. The plurality of first sidewall spacer layers has a thickness greater than the plurality of second sidewall spacer layers, based on a surface of the base substrate. The plurality of first sidewall spacer layers has a material structure different than the plurality of second sidewall spacer layers.