Active matrix substrate and method for producing same
US10825843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2017 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Oct 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is an active matrix substrate (100A) including: a gate metal layer (15) that has a two-layer structure composed of a Cu layer (15b) and a Ti layer (15a); a first insulating layer (16) on the gate metal layer (15); a source metal layer (18) that is formed on the first insulating layer (16) and has a two-layer structure composed of a Cu layer (18b) and a Ti layer (18a); a second insulating layer (19) on the source metal layer (18); a conductive layer (25) that is formed on the second insulating layer (19), and is in contact with the gate metal layer (15) within a first opening (16a1) formed in the first insulating layer (16) and is in contact with the source metal layer (18) within a second opening (19a2) formed in the second insulating layer (19); and a first transparent conductive layer (21) that is formed on the conductive layer (25) and includes any of a pixel electrode, a common electrode and an auxiliary capacitor electrode. The conductive layer (25) does not include any of the pixel electrode, the common electrode, and the auxiliary capacitor electrode, and does not have a Ti layer being in contact with the Cu layer (15b) of the gate metal layer (15).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.