Semiconductor surface passivation
US10825950B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | May 14, 2019 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | May 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new process that enables void-free direct-bonded MBE-passivated large-format image sensors is disclosed. This process can be used to produce thin large-area image sensors for UV and soft x-ray imaging. Such devices may be valuable in future astronomy missions or in the radiology field. Importantly, by controlling the hydrogen concentration in the silicon oxide layers of the image sensor and the support wafer, voids in the bonding interface can be significantly reduced or eliminated. This process can be applied to any wafer that includes active circuitry and requires a second wafer, such as a support wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.