Inventor · Nashua, NH, US

Christopher Leitz

25Patents
7h-index
25Co-inventors
65Inventor score

Filing activity: Jun 18, 2002 → Jan 31, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7049627B2 Semiconductor heterostructures and related methods Electricity 84 Expired
US6730551B2 Formation of planar strained layers Electricity 57 Expired
US7138310B2 Semiconductor devices having strained dual channel layers Emerging Cross-Sectional Technologies 38 Expired
US7566606B2 Methods of fabricating semiconductor devices having strained dual channel layers Emerging Cross-Sectional Technologies 15 Active
US7829442B2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Electricity 12 Active
US6916727B2 Enhancement of P-type metal-oxide-semiconductor field effect transistors Electricity 9 Expired
US7301180B2 Structure and method for a high-speed semiconductor device having a Ge channel layer Electricity 8 Expired
US7141820B2 Structures with planar strained layers Electricity 7 Expired
US7332417B2 Semiconductor structures with structural homogeneity Electricity 7 Expired
US8076569B2 Method and structure, using flexible membrane surfaces, for setting and/or maintaining a uniform micron/sub-micron gap separation between juxtaposed photosensitive and heat-supplying surfaces of photovoltaic chips and the like for the generation of electrical power Emerging Cross-Sectional Technologies 4 Active
US7375385B2 Semiconductor heterostructures having reduced dislocation pile-ups Electricity 4 Expired
US8129747B2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Electricity 3 Active
US8633373B2 Sub-micrometer gap thermophotovoltaic structure (MTPV) and fabrication method therefor Emerging Cross-Sectional Technologies 2 Active
US8823056B2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Electricity 2 Active
US8236603B1 Polycrystalline semiconductor layers and methods for forming the same Emerging Cross-Sectional Technologies 2 Active
US7494881B2 Methods for selective placement of dislocation arrays Emerging Cross-Sectional Technologies 1 Active
US8822813B2 Submicron gap thermophotovoltaic structure and method Emerging Cross-Sectional Technologies 1 Active
US8436336B2 Structure and method for a high-speed semiconductor device having a Ge channel layer Electricity 0 Active
US11372119B2 Rapid prototyping of single-photon-sensitive silicon avalanche photodiodes Electricity 0 Active
US9349891B2 Submicron gap thermophotovoltaic structure and fabrication method Emerging Cross-Sectional Technologies 0 Active
US9309607B2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Electricity 0 Active
US10825950B2 Semiconductor surface passivation Electricity 0 Active
US7368308B2 Methods of fabricating semiconductor heterostructures Electricity 0 Expired
US9934964B2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods Electricity 0 Active
US8450598B2 Method and structure for providing a uniform micron/sub-micron gap separation within micro-gap thermophotovoltaic devices for the generation of electrical power Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.