Connection structure and method of forming the same
US10833002B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 20, 2019 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Jun 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a connection structure for a semiconductor package which includes: a first passivation layer having an opening; a first conductive pattern that penetrates the first passivation layer and protrudes upwardly from the first passivation layer; a second passivation layer on the first passivation layer and covering the first conductive pattern; a second conductive pattern on the second passivation layer and electrically connected to the first conductive pattern; a third passivation layer on the second passivation layer and covering the second conductive pattern; and an external terminal in the opening and electrically connected to the first conductive pattern, wherein the first conductive pattern is thicker than the second conductive pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.