Thermalization structure for cryogenic temperature devices
US10833241B1 · kind B1 · utility
1Cited by
5References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 20, 2019 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Jun 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/445
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermalization structure is formed using a foil and a low temperature device (LTD). The foil includes a first layer of a first material. The LTD includes a surface from which heat is transferred away from the LTD. A coupling is formed between the foil and the surface of the LTD, where the coupling includes a bond formed between the foil and the surface such that forming the bond forms a set of ridges in the foil, a ridge in the set of ridges operating to dissipate the heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.