Method for fabrication of a CEM device
US10833271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2018 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Mar 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for the fabrication of a correlated electron material (CEM) switching device, the method comprising: forming a layer of a conductive substrate; forming a layer of a correlated electron material on the conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; and patterning the layers whereby to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, wherein the patterning comprises the following steps: forming a hard mask on the layer of the conductive overlay; dry etching the layer of conductive overlay and the layer of correlated electron material whereby to form a partially formed stack; depositing a coating of a protective polymer over at least sidewalls of the partially formed stack; and dry etching the layer of conductive substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.