Acoustic management in integrated circuit using phononic bandgap structure
US10833648B2 · kind B2 · utility
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31References
17Claims
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Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Nov 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. A phonon device is fabricated on the IC die that is configured to emit or to receive phonons that have a range of ultrasonic frequencies. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel is located in the phononic bandgap structure between the phonon device and a surface of the encapsulated IC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.