Method for programming a resistive memory
US10839902B2 · kind B2 · utility
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Key dates
| Filing date | Apr 26, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a non-volatile resistive memory including a plurality of non-volatile resistive memory cells, each memory cell being able to switch in a reversible manner between a low resistance state in which the memory cell has an electrical resistance value lower than a first resistance threshold; and a high resistance state in which the memory cell has an electrical resistance value greater than the first resistance threshold; the programming method including determining the first resistance threshold carried out periodically during the lifetime of the resistive memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.