Elisa VIANELLO
32Patents
3h-index
42Co-inventors
59Inventor score
Filing activity: Sep 18, 2014 → Oct 11, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10388376B2 | Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory | Physics | 20 | Active |
| US9722177B2 | Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal | Electricity | 5 | Active |
| US9263129B2 | Method for determining programming parameters for programming a resistive random access memory | Physics | 3 | Active |
| US10861545B2 | Programmable artificial neuron and associated programming method | Physics | 3 | Active |
| US10002664B2 | Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes | Physics | 2 | Active |
| US9431607B2 | Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal | Physics | 2 | Active |
| US9449688B2 | Device and method for writing data to a resistive memory | Physics | 2 | Active |
| US11017293B2 | Method of programming an artificial neuron network | Physics | 1 | Active |
| US10540099B2 | System for managing the wear of an electronic memory | Physics | 1 | Active |
| US10741757B2 | Process for the manufacture of a recurrent neural network calculator | Electricity | 1 | Active |
| US10559355B2 | Device and method for writing data to a resistive memory | Physics | 1 | Active |
| US11189792B2 | Oxide-based resistive non-volatile memory cell and method for manufacturing same | Electricity | 1 | Active |
| US10985317B2 | Device for selecting a memory cell | Electricity | 0 | Active |
| US11551073B2 | Modulation device and method, artificial synapse comprising said modulation device, short term plasticity method in an artificial neural network comprising said artificial synapse | Physics | 0 | Active |
| US12394464B2 | Hybrid FeRAM/OxRAM data storage circuit | Physics | 0 | Active |
| US12022751B2 | Method for fabricating molds for lithography by nano-imprinting | Electricity | 0 | Active |
| US11217307B2 | Circuit and method for programming resistive memory cells | Physics | 0 | Active |
| US11348011B2 | Method for unsupervised sorting in real time of action potentials of a plurality of biological neurons | Physics | 0 | Active |
| US11960036B2 | Device and method for processing signals from a set of ultrasonic transducers | Physics | 0 | Active |
| US10074802B2 | Device with transistors distributed over several superimposed levels integrating a resistive memory | Electricity | 0 | Active |
| US11145812B2 | Resistive random access memory device | Physics | 0 | Active |
| US12374397B2 | Memory cell, electronic circuit comprising such cells, related programming method and multiplication and accumulation method | Physics | 0 | Active |
| US12363918B2 | Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory | Electricity | 0 | Active |
| US10839902B2 | Method for programming a resistive memory | Physics | 0 | Active |
| US12136022B2 | Method of training a logistic regression classifier with a resistive random access memory | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.