Patent · US Active

Semiconductor device for bonding conductive layers exposed from surfaces of respective interconnection layers

US10840204B2 · kind B2 · utility

0Cited by
7References
4Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 19, 2019
Grant dateNov 17, 2020
Priority date
Expiry dateDec 19, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/05442
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Certain embodiments provide a method for manufacturing a semiconductor device including forming a first interconnection layer having a first conductive layer and a first insulating layer which are exposed from a surface of the first interconnection layer, forming a second interconnection layer having a second conductive layer and a second insulating layer which are exposed from a surface of the second interconnection layer, forming a first non-bonded surface on the surface of the first insulating layer by making a partial area of the surface of the first insulating layer lower than the surface of the first conductive layer, the partial area containing surroundings of the first conductive layer, and connecting the surface of the first conductive layer and the surface of the second conductive layer and bonding the surface of the first insulating layer excluding the first non-bonded surface and the surface of the second insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.