System and method for extreme ultraviolet source control
US10842009B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jun 3, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Jun 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0027
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A method for extreme ultraviolet (EUV) lithography includes generating a target droplet, producing a target plume by heating the target droplet with a first laser pulse, directing first and second laser beams onto the target plume, and receiving the first and the second laser beams reflected by the target plume.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.