Gas supply unit and substrate processing system
US10844491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2016 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Aug 27, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45563
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.