Patent · US Active

Semiconductor wafer made of monocrystalline silicon, and method for producing same

US10844515B2 · kind B2 · utility

0Cited by

0References

12Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Walter Heuwieser · Stammham, DE
Michael SKROBANEK · Freiberg, DE
Gudrun Kissinger · Lebus, DE

Key dates

Filing date	Dec 2, 2016
Grant date	Nov 24, 2020
Priority date	—
Expiry date	Jan 31, 2037

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01P2006/80
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further contains BMD seeds having a density averaged over the radius of not less than 1×105 cm−3 and not more than 1×107 cm−3; surface defects having a density averaged over the radius of not less than 1100 cm−2; and BMDs, whose density is not lower than a lower limit of 5×108/cm3. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.