Mask, method of forming the same and method of manufacturing a semiconductor device using the same
US10845698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.