MRAM array having reference cell structure and circuitry that reinforces reference states by induced magnetic field
US10847199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Mar 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device that includes magnetic read elements and magnetic reference cells. The magnetic reference cells include magnetic tunnel junction elements having the same construction as the magnetic read elements. The reference cells produce a reference signal that can be compared with a read signal from the magnetic read element to determine whether the read element is in a high or low resistance state. During creation of the reference signal, the current passes in such a way so that reference cells are forced to be in the right state while causing no disturbance to the reference cell. The reference cell includes magnetic tunnel junction elements and also includes circuitry configured to produce a magnetic field that biases the magnetic tunnel junction elements of the reference cell into a desired magnetic state to ensure that the desired magnetic state of the reference cell magnetic tunnel junction elements is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.