Method of fabricating semiconductor device
US10847362B2 · kind B2 · utility
1Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Dec 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.