Jaesoon Lim
11Patents
1h-index
27Co-inventors
50Inventor score
Filing activity: Nov 23, 2009 → Jun 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7989877B2 | Semiconductor devices including a dielectric layer | Electricity | 1 | Active |
| US10847362B2 | Method of fabricating semiconductor device | Electricity | 1 | Active |
| US11332486B2 | Aluminum compound and method for manufacturing semiconductor device using the same | Electricity | 0 | Active |
| US12029027B2 | Capacitor and memory device | Electricity | 0 | Active |
| US11678476B2 | Capacitor and DRAM device including the same | Electricity | 0 | Active |
| US11081389B2 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
| US11466043B2 | Niobium compound and method of forming thin film | Emerging Cross-Sectional Technologies | 0 | Active |
| US11524973B2 | Metal compounds and methods of fabricating semiconductor devices using the same | Electricity | 0 | Active |
| US11254698B2 | Cobalt precursor and methods for manufacture using the same | Electricity | 0 | Active |
| US12398166B2 | Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound | Chemistry; Metallurgy | 0 | Active |
| US10900119B2 | Tungsten precursor and method of forming Tungsten containing layer using the same | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.