Ruthenium-containing semiconductor structure and method of manufacturing the same
US10847410B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 13, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Sep 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (H2O2), potassium periodate (KIO4), potassium iodate (KIO3), potassium permanganate (KMnO4), iron(III) nitrate (FeNO3) and a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.