Charge release layer to remove charge carriers from dielectric grid structures in image sensors

US10847564B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Chung Su · Tainan, TW
• Jiech-Fun Lu · 巷口, TW

Key dates

• Filing date: Jul 24, 2019
• Grant date: Nov 24, 2020
• Expiry date: Jul 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

Various embodiments of the present disclosure are directed towards an image sensor including a charge release layer. A photodetector is disposed within a semiconductor substrate. An etch stop layer overlies the photodetector. A color filter overlies the etch stop layer. A dielectric grid structure surrounds the color filter. The charge release layer is sandwiched between the dielectric grid structure and the etch stop layer. The charge release layer surrounds the color filter and comprises a conductive material. The charge release layer directly contacts the color filter.