Semiconductor device and method for fabricating the same
US10847709B1 · kind B1 · utility
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3References
7Claims
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Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
A semiconductor device includes: a magnetic tunneling junction (MTJ) on a substrate; a first inter-metal dielectric (IMD) layer around the MTJ; a metal interconnection on and directly contacting the MTJ; a second IMD layer on the first IMD layer and around the metal interconnection; and a metal oxide layer on the second IMD layer and around the metal interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.