Light detector
US10847737B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.