Methods for repairing substrate lattice and selective epitaxy processing
US10854450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Oct 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes patterned devices and methods for repairing substrate lattice damage in a patterned device. The patterned device includes a substrate, an alternating conductor and dielectric stack atop the substrate, a channel hole extending through the alternating conductor and dielectric stack to the substrate, and an epitaxial grown layer at a bottom of the channel hole and a top surface of the substrate. A part of the substrate in contact with the epitaxial grown layer has a dopant or doping concentration different from an adjacent part of the substrate. The method includes forming a channel hole in an insulating layer atop a substrate, forming an amorphous layer in a top side of the substrate below the channel hole, heating to crystallize the amorphous layer, and growing an epitaxial layer on the crystallized layer in the channel hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.