Semiconductor device and fabrication method thereof

US10854467B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Hai Yang Zhang · Shanghai, CN
• Yan Wang · Shanghai, CN
• Xin Jiang · Longbeilingcun, CN

Key dates

• Filing date: Aug 7, 2018
• Grant date: Dec 1, 2020
• Expiry date: Aug 7, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device and fabrication method thereof are provided. The fabrication method include: providing a to-be-etched material layer; forming a plurality of discrete sacrificial layers on the to-be-etched material layer; forming first initial spacers on sidewalls of each sacrificial layer, where each first initial spacer includes a first bottom region and a first top region on the first bottom region; removing the sacrificial layers; removing the first bottom region of the first initial spacer to form a first spacer from the first top region; forming second spacers on sidewalls of each first spacer; removing the first spacer; and etching the to-be-etched material layer by using the second spacers as an etch mask.