Redistribution layers with carbon-based conductive elements, methods of fabrication and related semiconductor device packages and systems
US10854549B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 31, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Dec 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/18
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device packages include a redistribution layer (RDL) with carbon-based conductive elements. The carbon-based material of the RDL may have low electrical resistivity and may be thin (e.g., less than about 0.2 μm). Adjacent passivation material may also be thin (e.g., less than about 0.2 μm). Methods for forming the semiconductor device packages include forming the carbon-based material (e.g., at high temperatures (e.g., at least about 550° C.)) on an initial support wafer with a sacrificial substrate. Later or separately, components of a device region of the package may be formed and then joined to the initial support wafer before the sacrificial substrate is removed to leave the carbon-based material joined to the device region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.