Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same
US10854612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Feb 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.