Minhee Cho
18Patents
3h-index
39Co-inventors
56Inventor score
Filing activity: Oct 11, 2013 → Dec 15, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9053971B2 | Semiconductor devices having hybrid capacitors and methods for fabricating the same | Electricity | 9 | Active |
| US10854612B2 | Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same | Electricity | 8 | Active |
| US9331140B2 | Semiconductor devices having hybrid capacitors and methods for fabricating the same | Electricity | 5 | Active |
| US11062751B2 | Memory device | Physics | 2 | Active |
| US11411007B2 | Semiconductor memory device and method of manufacturing the same | Electricity | 2 | Active |
| US10916655B2 | Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof | Electricity | 2 | Active |
| US10083840B2 | System and method for regenerating phosphoric acid solution, and apparatus and method for treating substrate | Electricity | 1 | Active |
| US11508851B2 | Semiconductor device | Electricity | 1 | Active |
| US11917805B2 | Semiconductor memory device | Electricity | 1 | Active |
| US12166132B2 | Semiconductor device | Electricity | 0 | Active |
| US12342530B2 | Transistor structure including oxide semiconductor pattern surrounding bottom and sidewall of gate and semiconductor device using the same | Electricity | 0 | Active |
| US11482267B2 | Memory device | Physics | 0 | Active |
| US11342456B2 | Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof | Electricity | 0 | Active |
| US11862476B2 | Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material | Electricity | 0 | Active |
| US11647625B2 | Memory device having a channel provided on a memory unit | Electricity | 0 | Active |
| US11922984B2 | Memory device having volatile and non-volatile memory cells | Physics | 0 | Active |
| US10049888B2 | System and method for regenerating phosphoric acid solution, and apparatus and method for treating substrate | General | 0 | Revoked |
| US12408324B2 | Semiconductor memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.