Elementary cell comprising a resistive random-access memory and a selector, stage and matrix of stages comprising a plurality of said cells and associated manufacturing method

US10854673B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Gabriele Navarro · Moirans, FR

Key dates

• Filing date: Dec 26, 2018
• Grant date: Dec 1, 2020
• Expiry date: Dec 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

An elementary cell includes a non-volatile resistive random-access memory mounted in series with a volatile selector device, the memory including an upper electrode, a lower electrode and a layer made of a first active material, designated memory active layer. The selector device includes an upper electrode, a lower electrode and a layer made of a second active material, designated selector active layer. The cell includes a one-piece conductor element including a first branch having one face in contact with the lower surface of the memory active layer in order to form the lower electrode of the memory, a second branch having one face in contact with the upper surface of the selector active layer in order to form the lower electrode of the memory.