Non-volatile memory and manufacturing method for the same
US10854758B2 · kind B2 · utility
0Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Feb 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a non-volatile memory and a manufacturing method for the same. In the non-volatile memory, a floating gate structure has a first sharp portion and a second sharp portion, and a corner formed by a side surface of the floating gate structure and a part of a top surface of the floating gate structure is not covered by a control gate structure. The corner is connected between the first sharp portion and one end of the second sharp portion. A tunneling dielectric layer of an erasing gate structure covers the first sharp portion, the second sharp portion, and a tip part of the corner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.