Formation of correlated electron material (CEM) devices with restored sidewall regions
US10854811B2 · kind B2 · utility
1Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Oct 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under or beneath a conductive overlay. The method may further include at least partially restoring properties of the exposed sidewall region to a CEM via exposure of the exposed sidewall region to one or more gaseous annealing agents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.