Patent · US Active

Systems and methods for gated-insulator reconfigurable non-volatile memory devices

US10854812B2 · kind B2 · utility

0Cited by

8References

20Claims

0Family size

Assignee

University of Cincinnati · US

Inventors

Rashmi Jha · Wyoming, US
Andrew Rush · Cincinnati, US
Eric Herrmann · Bound Brook, US

Key dates

Filing date	Dec 24, 2019
Grant date	Dec 1, 2020
Priority date	—
Expiry date	Dec 24, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/77
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Systems and methods of use and fabrication are described for a non-volatile resistive random access memory (RRAM) multi-terminal device including a first electrode, a second electrode, a metal oxide disposed between the first electrode and the second electrode, and an at least first gate configured to apply a voltage bias to change a resistive state in the metal oxide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.