Rashmi Jha
19Patents
5h-index
36Co-inventors
62Inventor score
Filing activity: Sep 10, 2007 → Dec 24, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7838908B2 | Semiconductor device having dual metal gates and method of manufacture | Electricity | 23 | Active |
| US8502343B1 | Nanoelectric memristor device with dilute magnetic semiconductors | Physics | 23 | Active |
| US7754594B1 | Method for tuning the threshold voltage of a metal gate and high-k device | Electricity | 16 | Active |
| US7943457B2 | Dual metal and dual dielectric integration for metal high-k FETs | Electricity | 11 | Active |
| US7498271B1 | Nitrogen based plasma process for metal gate MOS device | Electricity | 7 | Active |
| US7947549B2 | Gate effective-workfunction modification for CMOS | Electricity | 5 | Active |
| US7919379B2 | Dielectric spacer removal | Electricity | 5 | Active |
| US8053306B2 | PFET with tailored dielectric and related methods and integrated circuit | Electricity | 5 | Active |
| US9564505B2 | Changing effective work function using ion implantation during dual work function metal gate integration | Electricity | 4 | Active |
| US8436427B2 | Dual metal and dual dielectric integration for metal high-K FETs | Electricity | 4 | Active |
| US8753936B2 | Changing effective work function using ion implantation during dual work function metal gate integration | Electricity | 4 | Active |
| US10553793B2 | Systems and methods for gated-insulator reconfigurable non-volatile memory devices | Physics | 3 | Active |
| US8183642B2 | Gate effective-workfunction modification for CMOS | Electricity | 3 | Active |
| US8120144B2 | Method for forming dual high-K metal gate using photoresist mask and structures thereof | Electricity | 1 | Active |
| US8138041B2 | In-situ silicon cap for metal gate electrode | Electricity | 1 | Active |
| US7915115B2 | Method for forming dual high-k metal gate using photoresist mask and structures thereof | Electricity | 1 | Active |
| US10854812B2 | Systems and methods for gated-insulator reconfigurable non-volatile memory devices | Physics | 0 | Active |
| US7955926B2 | Structure and method to control oxidation in high-k gate structures | Electricity | 0 | Active |
| US10944053B2 | Systems and methods for gated-insulator reconfigurable non-volatile memory devices | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.