FET operational temperature determination by field plate resistance thermometry
US10855230B2 · kind B2 · utility
1Cited by
48References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 12, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Aug 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.