Atomic layer deposition method
US10858736B2 · kind B2 · utility
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15References
19Claims
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Key dates
| Filing date | Dec 6, 2016 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.