Ming-Te Chen
40Patents
6h-index
63Co-inventors
72Inventor score
Filing activity: Jul 14, 2000 → Dec 23, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8021992B2 | High aspect ratio gap fill application using high density plasma chemical vapor deposition | Electricity | 20 | Active |
| US7468326B2 | Method of cleaning a wafer | Electricity | 19 | Expired |
| US7229896B2 | STI process for eliminating silicon nitride liner induced defects | Electricity | 15 | Expired |
| US9543438B2 | Contact resistance reduction technique | Electricity | 11 | Active |
| US6975842B2 | Mobile phone with battery latch | Electricity | 11 | Expired |
| USD437372S | Billiard cue | General | 8 | Expired |
| US9209243B2 | Method of forming a shallow trench isolation structure | Electricity | 3 | Active |
| US11670553B2 | Gate stack treatment | Electricity | 2 | Active |
| US9512519B2 | Atomic layer deposition apparatus and method | Electricity | 2 | Active |
| US8677655B2 | Shoe with anti-slip device | Human Necessities | 2 | Active |
| US8540502B2 | Adjustable shoe mold set | Performing Operations; Transporting | 1 | Active |
| US8975155B2 | Method of forming a shallow trench isolation structure | Electricity | 1 | Active |
| US9982338B2 | High-throughput system and method for post-implantation single wafer warm-up | Electricity | 1 | Active |
| US7606021B2 | Metal-insulator-metal capacitor and method for fabricating the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US11088029B2 | Gate stack treatment | Electricity | 1 | Active |
| US12300549B2 | Gate stack treatment | Electricity | 0 | Active |
| US11081584B2 | Method of manufacturing semiconductor devices using a capping layer in forming gate electrode and semiconductor devices | Electricity | 0 | Active |
| US9663854B2 | High-throughput system and method for post-implantation single wafer warm-up | Electricity | 0 | Active |
| USD1080624S1 | Keyboard | General | 0 | Active |
| US10858736B2 | Atomic layer deposition method | Electricity | 0 | Active |
| US11329160B2 | FinFET gate structure | Electricity | 0 | Active |
| US9589804B2 | Method of forming finFET gate oxide | Electricity | 0 | Active |
| US9378990B2 | Adjusting intensity of laser beam during laser operation on a semiconductor device | Electricity | 0 | Active |
| US10121637B2 | Multi-platen ion implanter and method for implanting multiple substrates simultaneously | Electricity | 0 | Active |
| US9606181B2 | Processing apparatus, ion implantation apparatus and ion implantation method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.