Magnetoresistive random access memory (MRAM) with OTP cells
US10861524B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2019 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Dec 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, wherein each MRAM cell has a select transistor and a Magnetic Tunnel Junction (MTJ). A plurality of rows of the MRAM array is configured as a single one-time-programmable (OTP) row having OTP cells, wherein the corresponding word lines of each row of the plurality of rows are electrically connected. In each column of the single OTP row, source electrodes of the select transistors in the corresponding MRAM cells in the column of the single OTP row are coupled to the corresponding source line, drain electrodes of the select transistors in the corresponding MRAM cells in the column of the single OTP row are electrically connected, and only a first MTJ of a first MRAM cell in the corresponding MRAM cells in the column of the single OTP row is connected to the corresponding bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.