Adaptive memory cell write conditions
US10861544B2 · kind B2 · utility
0Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2017 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Sep 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and related apparatus for using an indication of RRAM cell resistance to determine a write condition are disclosed. A cell characteristic of an RRAM cell is determined to a finer resolution than a data read value. A write condition is selected for the RRAM cell, based on the cell characteristic. The RRAM cell is written to, using the selected write condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.