Inventor · San Jose, CA, US

Zhichao Lu

40Patents
4h-index
29Co-inventors
59Inventor score

Filing activity: Dec 14, 2006 → Dec 4, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8391059B2 Methods for operating a semiconductor device Electricity 13 Active
US8048191B2 Compound magnetic powder and magnetic powder cores, and methods for making them thereof Electricity 12 Active
US10777608B2 RRAM process integration scheme and cell structure with reduced masking operations Physics 7 Active
US8787072B2 Floating-body/gate DRAM cell Electricity 6 Active
US11081168B2 Mixed digital-analog memory devices and circuits for secure storage and computing Physics 3 Active
US11069391B2 Dual-precision analog memory cell and array Physics 3 Active
US10998044B2 RRAM write using a ramp control circuit Physics 2 Active
US11462585B2 RRAM process integration scheme and cell structure with reduced masking operations Physics 2 Active
US11018295B2 Non-volatile memory structure with positioned doping Physics 2 Active
US10943655B2 Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change material Physics 2 Active
US11468947B2 Techniques for initializing resistive memory devices by applying voltages with different polarities Physics 2 Active
US11489116B2 Thermal field controlled electrical conductivity change device Electricity 1 Active
US11309015B2 Floating body DRAM with reduced access energy Physics 1 Active
US11776156B2 Pose empowered RGB-flow net Physics 1 Active
US11653580B2 Non-volatile memory structure with positioned doping Physics 1 Active
US11557264B2 Display driver system with embedded non-volatile memory Electricity 1 Active
US12230309B2 Dual-precision analog memory cell and array Physics 0 Active
US11963465B2 Non-volatile memory structure with positioned doping Physics 0 Active
US12327587B2 Method of RRAM write ramping voltage in intervals Physics 0 Active
US12142241B2 Display driver system with embedded non-volatile memory Electricity 0 Active
US11682457B2 Method of RRAM write ramping voltage in intervals Physics 0 Active
US11950519B2 Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same Physics 0 Active
US12144269B2 Thermal field controlled electrical conductivity change device Electricity 0 Active
US10861544B2 Adaptive memory cell write conditions Physics 0 Active
US12232335B2 RRAM process integration scheme and cell structure with reduced masking operations Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.