Patent · US Active

Semiconductor device and manufacturing method thereof

US10861701B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Jia-Ming Lin · Tainan, TW
Shiu-Ko JangJian · Tainan, TW
Chun Che Lin · Sanxing, TW

Key dates

Filing date	Jun 29, 2015
Grant date	Dec 8, 2020
Priority date	—
Expiry date	Jun 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate, at least one layer, a metal adhesive, and a metal structure. The layer is disposed on the substrate. The layer has an opening, and the opening has a bottom surface and at least one sidewall. The metal adhesive is disposed on the bottom surface of the opening while leaving at least a portion of the sidewall of the opening exposed. The metal structure is disposed in the opening and on the metal adhesive.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.