Inventor · Tainan, TW

Jia-Ming Lin

14Patents

2h-index

18Co-inventors

43Inventor score

Filing activity: Jun 29, 2015 → Jun 13, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9691766B1	Fin field effect transistor and method for fabricating the same	Electricity	11	Active
US10658252B2	Semiconductor structure and method for forming the same	Electricity	2	Active
US11610982B2	Void elimination for gap-filling in high-aspect ratio trenches	Electricity	1	Active
US11967504B2	Gate structures in transistor devices and methods of forming same	Electricity	1	Active
US11715762B2	Transistor gate structures and methods of forming the same	Electricity	1	Active
US10269664B2	Semiconductor structure and method for forming the same	Electricity	1	Active
US9991154B2	Method for fabricating a fin field effect transistor and a shallow trench isolation	Electricity	0	Active
US10854713B2	Method for forming trench structure of semiconductor device	Electricity	0	Active
US12100751B2	Void elimination for gap-filling in high-aspect ratio trenches	Electricity	0	Active
US9824943B2	Semiconductor structure and method for forming the same	Electricity	0	Active
US9871100B2	Trench structure of semiconductor device having uneven nitrogen distribution liner	Electricity	0	Active
US10957545B2	Method for manufacturing semiconductor device	Electricity	0	Active
US10861701B2	Semiconductor device and manufacturing method thereof	Electricity	0	Active
US12218199B2	Transistor gate structures and methods of forming the same	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.