Patent · US Active

IGBT module with improved heat dissipation structure

US10861768B2 · kind B2 · utility

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5Claims

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Assignee

AMULAIRE THERMAL TECHNOLOGY, INC. · TW

Inventors

TZE-YANG YEH · New Taipei, TW
Chun-Lung Wu · Taichung, TW

Key dates

Filing date	Jun 16, 2019
Grant date	Dec 8, 2020
Priority date	—
Expiry date	Jun 16, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/3736
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An IGBT module with an improved heat dissipation structure includes a layer of IGBT chips, a bonding layer, a thick copper layer, a polymer composite layer, a thermal spray layer, and a heat dissipation layer. The thermal spray layer is disposed on the heat dissipation layer. The polymer composite layer is disposed on the thermal spray layer. The thick copper layer is disposed on the polymer composite layer. The bonding layer is disposed on the thick copper layer. The layer of IGBT chips is disposed on the bonding layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.