Patent · US Active

Shielding structures

US10861810B2 · kind B2 · utility

4Cited by
10References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2019
Grant dateDec 8, 2020
Priority date
Expiry dateApr 23, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/37001
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.