Semiconductor device having magnetic tunnel junction pattern
US10861902B2 · kind B2 · utility
3Cited by
29References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 16, 2018 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Jun 16, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.