Vertical trench power devices with oxygen inserted Si-layers

US10861966B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Thomas Feil · Villach, AT
• Robert Haase · Rancho Palos Verdes, US
• Martin Poelzl · Ossiach, AT
• Maximilian Roesch · Villach, AT
• Sylvain Leomant · Pörtschach am Wörther See, AT
• Bernhard Goller · Villach, AT
• Ravi Keshav Joshi · Klagenfurt, AT

Key dates

• Filing date: Dec 18, 2019
• Grant date: Dec 8, 2020
• Expiry date: Dec 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate adjacent the gate trench; a source region in the Si substrate above the body region; a diffusion barrier structure adjacent a sidewall of the gate trench, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si; and a channel region formed in the Si capping layer and which vertically extends along the sidewall of the gate trench. Corresponding methods of manufacture are also described.